Ionizer and substrate transfer system having the same, and method of manufacturing a semiconductor device using the same

Invention Grant

US09543151B2 Ionizer and substrate transfer system having the same, and method of manufacturing a semiconductor device using the same 有权

Title translation: 具有这样的离子发生器和基板转印系统以及使用其的半导体器件的制造方法

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Patent Title: Ionizer and substrate transfer system having the same, and method of manufacturing a semiconductor device using the same
Patent Title (中): 具有这样的离子发生器和基板转印系统以及使用其的半导体器件的制造方法
Application No.: US14730239

Application Date: 2015-06-04
Publication No.: US09543151B2

Publication Date: 2017-01-10
Inventor: Jae-Wook Lee , Ho-Hyung Jung
Applicant: Jae-Wook Lee , Ho-Hyung Jung
Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
Agency: Muir Patent Law, PLLC
Priority: KR10-2014-0108586 20140820
Main IPC: H01L21/469
IPC: H01L21/469 ; H01L21/26 ; H01T19/04 ; H01T23/00 ; H01L21/68

Ionizer and substrate transfer system having the same, and method of manufacturing a semiconductor device using the same

Abstract:

An ionizer includes a body extending in a first direction, a sheath gas nozzle installed in a lower portion of the body and having a spray hole and an electrode needle disposed within the spray hole to generate a corona discharge, a gas supply provided in the body and configured to be in fluid communication with the spray hole to supply a gas to the spray hole such that ions generated by the electrode needle are spayed out to the outside of the ionizer from the spray hole, and a pair of first and second guiding plates disposed at opposite sides of the sheath gas nozzle and extending downward from first and second sides of the body opposite to each other to guide the ions sprayed from the spray hole to be directed to a target. A semiconductor device may be manufactured using the ionizer.

Abstract(Chinese):

电离器包括沿着第一方向延伸的主体，安装在主体的下部并具有喷孔的护套气体喷嘴和设置在喷孔内的电极针以产生电晕放电，设置在主体中的气体供应并且构造成与喷射孔流体连通以向喷射孔提供气体，使得由电极针产生的离子从喷射孔喷射到离子发生器的外部，并且一对第一和第二引导板设置在护套气体喷嘴的相对侧并且从主体的相对的第一和第二侧向下延伸，以引导从喷射孔喷射的离子被引导到目标。可以使用离子发生器制造半导体器件。

Public/Granted literature

US20160056062A1 IONIZER AND SUBSTRATE TRANSFER SYSTEM HAVING THE SAME, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2016-02-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理