Invention Grant
- Patent Title: Method of singulating semiconductor devices using isolation trenches
- Patent Title (中): 使用隔离沟槽分割半导体器件的方法
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Application No.: US14188355Application Date: 2014-02-24
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Publication No.: US09543208B2Publication Date: 2017-01-10
- Inventor: Andre Schmenn , Damian Sojka , Isabella Goetz
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/82 ; H01L21/765 ; H01L29/06 ; H01L21/301
Abstract:
In accordance with an embodiment of the present invention, a method for forming a semiconductor device includes forming a device region in a substrate. The device region extends continuously from one sidewall of the substrate to an opposite sidewall of the substrate. The method further includes forming trenches in the substrate. The trenches divide the device region into active regions. The method also includes singulating the substrate by separating the substrate along the trenches.
Public/Granted literature
- US20150243561A1 Semiconductor Devices and Methods of Formation Thereof Public/Granted day:2015-08-27
Information query
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