发明授权
- 专利标题: Three-dimensional memory structure having self-aligned drain regions and methods of making thereof
- 专利标题(中): 具有自对准漏极区域的三维存储器结构及其制造方法
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申请号: US14976362申请日: 2015-12-21
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公开(公告)号: US09543320B2公开(公告)日: 2017-01-10
- 发明人: Liang Pang , Jayavel Pachamuthu , Yingda Dong
- 申请人: SANDISK TECHNOLOGIES INC.
- 申请人地址: US TX Plano
- 专利权人: SANDISK TECHNOLOGIES LLC
- 当前专利权人: SANDISK TECHNOLOGIES LLC
- 当前专利权人地址: US TX Plano
- 代理机构: The Marbury Law Group PLLC
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L27/11 ; H01L21/8239 ; H01L29/792 ; G11C11/34 ; H01L21/223 ; H01L21/768 ; H01L29/417 ; H01L29/51
摘要:
A memory stack structure can be formed through a stack of an alternating plurality of first material layers and second material layers and through an overlying temporary material layer having a different composition than the first and second material layers. The memory stack structure can include a memory film and a semiconductor channel layer. The overlying temporary material layer is removed selective to the stack to form a lateral recess. Portions of the memory film are removed around the lateral recess, and dopants are laterally introduced into an upper portion of the semiconductor channel to form a self-aligned drain region.
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