Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14548298Application Date: 2014-11-20
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Publication No.: US09543377B2Publication Date: 2017-01-10
- Inventor: Bo-Shih Huang , Chien-Hui Chuang , Cheng-Chou Hung
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/73 ; H01L29/78 ; H01L23/60 ; H01L29/788 ; H01L29/06 ; H01L29/74 ; H01L29/45
Abstract:
A semiconductor device comprising a substrate is disclosed. The substrate comprises: a well of type one; a first doped region of type two, provided in the well of type one; a well of type two, adjacent to the well of type one; and a first doped region of type one, doped in the well of type two. The substrate comprises no isolating material provided in a current path formed by the first doped region of type two, the well of type one, the well of type two and the first doped region of type one.
Public/Granted literature
- US20160148992A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-05-26
Information query
IPC分类:
