Invention Grant
- Patent Title: Method of forming patterned hard mask layer
- Patent Title (中): 形成图案化硬掩模层的方法
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Application No.: US14835730Application Date: 2015-08-26
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Publication No.: US09543408B1Publication Date: 2017-01-10
- Inventor: Yi-Hui Lin , Keng-Jen Lin , Chun-Yao Yang , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L21/3213 ; H01L21/3215
Abstract:
A method of forming a patterned hark mask layer includes the following steps. A semiconductor substrate is provided. An amorphous silicon layer is formed on the semiconductor substrate. An implantation process is performed on the amorphous silicon layer. An annealing treatment is performed on the amorphous silicon layer after the implantation process. A patterned hard mask layer is formed on the amorphous silicon layer after the annealing treatment.
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