Invention Grant
- Patent Title: Segmented power transistor
- Patent Title (中): 分段功率晶体管
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Application No.: US14531797Application Date: 2014-11-03
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Publication No.: US09543430B2Publication Date: 2017-01-10
- Inventor: Henry Litzmann Edwards
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap D. Chan; Frank D. Cimino
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/78 ; H01L27/088 ; H01L29/06 ; H01L29/417 ; H01L23/482 ; H01L23/528

Abstract:
A power transistor includes multiple substantially parallel transistor fingers, where each finger includes a conductive source stripe and a conductive drain stripe. The power transistor also includes multiple substantially parallel conductive connection lines, where each conductive connection line connects at least one source stripe to a common source connection or at least one drain stripe to a common drain connection. The conductive connection lines are disposed substantially perpendicular to the transistor fingers. At least one of the source or drain stripes is segmented into multiple portions, where adjacent portions are separated by a cut location having a higher electrical resistance than remaining portions of the at least one segmented source or drain stripe.
Public/Granted literature
- US20160126349A1 SEGMENTED POWER TRANSISTOR Public/Granted day:2016-05-05
Information query
IPC分类: