According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface; a p-side electrode; an n-side electrode; a p-side pillar; an n-side pillar; a first insulating layer; an optical layer; a second insulating layer; a first layer; a p-side interconnect; and an n-side interconnect. The first layer includes a first lower end portion and a second lower end portion.