Invention Grant
- Patent Title: Vertical hall sensors with reduced offset error
- Patent Title (中): 垂直霍尔传感器减少偏移误差
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Application No.: US14918704Application Date: 2015-10-21
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Publication No.: US09543504B2Publication Date: 2017-01-10
- Inventor: Christian Schott , Peter Hofmann
- Applicant: Melexis Technologies NV , X-FAB Semiconductor Foundries AG
- Applicant Address: BE Tessenderl O DE Erfurt
- Assignee: MELEXIS TECHNOLOGIES NV,X-FAB SEMICONDUCTOR FOUNDRIES AG
- Current Assignee: MELEXIS TECHNOLOGIES NV,X-FAB SEMICONDUCTOR FOUNDRIES AG
- Current Assignee Address: BE Tessenderl O DE Erfurt
- Agency: Workman Nydegger
- Priority: GB1418662.1 20141021
- Main IPC: H01L43/14
- IPC: H01L43/14 ; G01R33/07 ; H01L43/06 ; H01L43/04

Abstract:
A semiconductor chip for measuring a magnetic field based on the Hall effect. The semiconductor chip comprises an electrically conductive well having a first conductivity type, in a substrate having a second conductivity type. The semiconductor chip comprises at least four well contacts arranged at the surface of the well, and having the first conductivity type. The semiconductor chip comprises a plurality of buffer regions interleaved with the well contacts and having the first conductivity type. The buffer regions are highly conductive and the buffer region dimensions are such that at least part of the current from a well contact transits through one of its neighboring buffer regions.
Public/Granted literature
- US20160111631A1 VERTICAL HALL SENSORS WITH REDUCED OFFSET ERROR Public/Granted day:2016-04-21
Information query
IPC分类: