Invention Grant
- Patent Title: Deposition donor substrate and method for manufacturing light-emitting device
- Patent Title (中): 沉积施主基板和制造发光器件的方法
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Application No.: US14070062Application Date: 2013-11-01
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Publication No.: US09543548B2Publication Date: 2017-01-10
- Inventor: Satoshi Seo , Kohei Yokoyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-188004 20080721
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H01L51/00 ; C23C14/04

Abstract:
One surface of a first substrate provided with at least light-absorbing layers separately formed, partition layers each formed between the light-absorbing layers and having an inverse taper shape, and material layers formed on the light-absorbing layers and on the partition layers so that the material layers are separated from each other is disposed to face a deposition target surface of a second substrate; light irradiation is performed from the other surface of the first substrate, only the material layers in regions overlapped with the light-absorbing layers are heated and evaporated to the deposition target surface of the second substrate.
Public/Granted literature
- US20140057376A1 Deposition Donor Substrate and Method for Manufacturing Light-Emitting Device Public/Granted day:2014-02-27
Information query
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