Invention Grant
US09543738B2 Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
有权
{20-21}镓和氮的底物上的低电压激光二极管
- Patent Title: Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
- Patent Title (中): {20-21}镓和氮的底物上的低电压激光二极管
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Application No.: US12883652Application Date: 2010-09-16
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Publication No.: US09543738B2Publication Date: 2017-01-10
- Inventor: James W. Raring , Mathew Schmidt , Christiane Poblenz
- Applicant: James W. Raring , Mathew Schmidt , Christiane Poblenz
- Applicant Address: US CA Goleta
- Assignee: SORAA LASER DIODE, INC.
- Current Assignee: SORAA LASER DIODE, INC.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/34
- IPC: H01S5/34 ; H01S5/343 ; B82Y20/00 ; H01S5/20 ; H01S5/32 ; H01S5/227 ; H01S5/00 ; H01S5/02 ; H01S5/028 ; H01S5/40
Abstract:
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
Public/Granted literature
- US20160013620A9 Low Voltage Laser Diodes on Gallium and Nitrogen Containing Substrates Public/Granted day:2016-01-14
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