发明授权
- 专利标题： Microwave amplifier device
- 专利标题（中）： 微波放大器装置
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申请号： US14429040申请日： 2013-09-13
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公开(公告)号： US09543898B2公开(公告)日： 2017-01-10
- 发明人: Yoshinori Tsuyama , Hiroyuki Nonomura , Hiroshi Otsuka , Hifumi Noto , Yoshinori Yasunaga , Mitsuhiro Shimozawa , Yuichi Fujimoto
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Chiyoda-ku
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Chiyoda-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-210863 20120925
- 国际申请： PCT/JP2013/074857 WO 20130913
- 国际公布： WO2014/050611 WO 20140403
- 主分类号： H03F3/191
- IPC分类号： H03F3/191 ; H03F1/02 ; H03F3/24 ; H03F3/19 ; H03F3/60 ; H03F1/32
摘要：
A microwave amplifier including: a bias circuit that includes a line having an electrical length of one quarter the wavelength at the frequency configured to be amplified by the microwave amplifier and being connected between the output terminal of an amplifier and a bias voltage source, and a capacitor connected between a terminal where the line is connected to the bias voltage source and a ground that defines the reference potential of the microwave amplifier; and a resonant circuit that includes a resistor and a capacitor connected in series between the ground and the terminal where the line is connected to the bias voltage source.
公开/授权文献
- US20150222231A1 MICROWAVE AMPLIFIER DEVICE 公开/授权日：2015-08-06
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