Invention Grant
- Patent Title: Micro device transfer head array
- Patent Title (中): 微器件传输头阵列
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Application No.: US15052767Application Date: 2016-02-24
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Publication No.: US09548233B2Publication Date: 2017-01-17
- Inventor: Dariusz Golda , Andreas Bibl
- Applicant: LuxVue Technology Corporation
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/768 ; H01L23/48 ; H05K1/02 ; H05K1/03 ; H05K1/09 ; H05K1/11

Abstract:
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.
Public/Granted literature
- US20160196998A1 MICRO DEVICE TRANSFER HEAD ARRAY Public/Granted day:2016-07-07
Information query
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