发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US14611929申请日： 2015-02-02
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公开(公告)号： US09548310B2公开(公告)日： 2017-01-17
- 发明人: Hajime Kaneko , Satoshi Nagashima
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L27/115
摘要：
According to an embodiment, a semiconductor device includes a semiconductor substrate, a first region that is provided on the semiconductor substrate and has a line-and-space pattern extending in a first direction, and a second region that is provided adjacent to the first region on the semiconductor substrate and has a dummy pattern. The surface area per unit area of the second region is greater than the surface area per unit area of the first region.
公开/授权文献
- US20160005752A1 SEMICONDUCTOR DEVICE 公开/授权日：2016-01-07
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