Disclosed is a light emitting device. The light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer disposed under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer to the first semiconductor layer and contacted with the first semiconductor layer.