A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.