Invention Grant
- Patent Title: Compensating for hysteretic characteristics of crystal oscillators
- Patent Title (中): 补偿晶体振荡器的滞后特性
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Application No.: US14827192Application Date: 2015-08-14
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Publication No.: US09548744B2Publication Date: 2017-01-17
- Inventor: Vishal Agarwal , Mahadevan Srinivasan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H03L1/02
- IPC: H03L1/02 ; H03B5/04

Abstract:
In some examples, compensating for hysteretic characteristics of a crystal oscillator in a timing circuit includes obtaining a plurality of successive temperature measurements. From the plurality of successive temperature measurements, a temperature gradient having a sign and a magnitude can be determined. A frequency compensation parameter can then be determined based on any combination of two or more factors chosen from a set of factors including a temperature measurement, the sign of the temperature gradient, and the magnitude of the temperature gradient. A frequency error of the timing circuit can then be compensated based on the frequency compensation parameter.
Public/Granted literature
- US20160049945A1 COMPENSATING FOR HYSTERETIC CHARACTERISTICS OF CRYSTAL OSCILLATORS Public/Granted day:2016-02-18
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