Invention Grant
US09552858B2 STT-MRAM cell structure incorporating piezoelectric stress material
有权
STT-MRAM电池结构结合压电应力材料
- Patent Title: STT-MRAM cell structure incorporating piezoelectric stress material
- Patent Title (中): STT-MRAM电池结构结合压电应力材料
-
Application No.: US14947978Application Date: 2015-11-20
-
Publication No.: US09552858B2Publication Date: 2017-01-24
- Inventor: Jun Liu , Steve Kramer , Gurtej Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology. Inc.
- Current Assignee: Micron Technology. Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L27/22 ; H01L43/08
Abstract:
A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.
Public/Granted literature
- US20160078912A1 STT-MRAM CELL STRUCTURE INCORPORATING PIEZOELECTRIC STRESS MATERIAL Public/Granted day:2016-03-17
Information query
