Invention Grant
US09552962B2 Method of controlling an ion implanter in plasma immersion mode
有权
在等离子体浸入模式下控制离子注入机的方法
- Patent Title: Method of controlling an ion implanter in plasma immersion mode
- Patent Title (中): 在等离子体浸入模式下控制离子注入机的方法
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Application No.: US14349501Application Date: 2012-10-04
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Publication No.: US09552962B2Publication Date: 2017-01-24
- Inventor: Frank Torregrosa , Laurent Roux
- Applicant: ION BEAM SERVICES
- Applicant Address: FR Peynier
- Assignee: ION BEAM SERVICES
- Current Assignee: ION BEAM SERVICES
- Current Assignee Address: FR Peynier
- Agency: Sughrue Mion, PLLC
- Priority: FR1103032 20111006
- International Application: PCT/FR2012/000392 WO 20121004
- International Announcement: WO2013/057390 WO 20130425
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/317 ; C23C14/48 ; H01L21/223

Abstract:
The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising: an electricity generator; a first switch SW1 connected between the generator and the output terminal of the substrate power supply; and a second switch SW2 connected between the output terminal and a neutralization terminal; the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.
Public/Granted literature
- US20140327358A1 METHOD OF CONTROLLING AN ION IMPLANTER IN PLASMA IMMERSION MODE Public/Granted day:2014-11-06
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