Invention Grant
- Patent Title: Contacts for semiconductor devices and methods of forming thereof
- Patent Title (中): 用于半导体器件的触点及其形成方法
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Application No.: US14324890Application Date: 2014-07-07
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Publication No.: US09553016B2Publication Date: 2017-01-24
- Inventor: Mark James Harrison , Martin Sporn
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/285 ; H01L23/482 ; H01L21/683 ; H01L23/532
Abstract:
A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.
Public/Granted literature
- US20160005647A1 Contacts for Semiconductor Devices and Methods of Forming Thereof Public/Granted day:2016-01-07
Information query
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