Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14995457Application Date: 2016-01-14
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Publication No.: US09553089B2Publication Date: 2017-01-24
- Inventor: Jung-Gun You , Hyung-Jong Lee , Sung-Min Kim , Chong-Kwang Chang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2015-0046761 20150402
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L23/528 ; H01L29/06

Abstract:
A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.
Public/Granted literature
- US20160293599A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-10-06
Information query
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