发明授权
- 专利标题: Semiconductor arrangement with capacitor
- 专利标题(中): 半导体装置与电容器
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申请号: US14087009申请日: 2013-11-22
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公开(公告)号: US09553096B2公开(公告)日: 2017-01-24
- 发明人: Chern-Yow Hsu , Shih-Chang Liu , Chia-Shiung Tsai , Xiaomeng Chen , Chen-Jong Wang
- 申请人: Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人: Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Cooper Legal Group, LLC
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L27/108 ; H01L23/58 ; H01L49/02 ; H01L23/522
摘要:
A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region. The semiconductor arrangement includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where an electrode unit of the first electrode has a first portion and a second portion, and where the second portion is above the first portion and is wider than the first portion.
公开/授权文献
- US20150145101A1 SEMICONDUCTOR ARRANGEMENT WITH CAPACITOR 公开/授权日:2015-05-28
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