发明授权
- 专利标题： Circuit structure, transistor and semiconductor device
- 专利标题（中）： 电路结构，晶体管和半导体器件
-
申请号： US14827839申请日： 2015-08-17
-
公开(公告)号： US09553182B2公开(公告)日： 2017-01-24
- 发明人: Jiun-Lei Jerry Yu , Fu-Wei Yao , Chen-Ju Yu , Chun-Wei Hsu , King-Yuen Wong
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L27/092 ; H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/40 ; H01L29/45 ; H01L29/66
摘要：
A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a AlxGa(1−X)N (AlGaN) layer over the III-V semiconductor compound, a gate over the AlGaN layer, a passivation film over the gate and over a portion of the AlGaN layer, a source structure, and a drain structure on an opposite side of the gate from the source structure, wherein X ranges from 0.1 to 1. The source structure has a source contact portion and an overhead portion. The overhead portion is over at least a portion of the passivation film between the source contact portion and the gate. A distance between the source contact portion and the gate is less than a distance between the gate and the drain structure.
公开/授权文献
- US20150357453A1 CIRCUIT STRUCTURE, TRANSISTOR AND SEMICONDUCTOR DEVICE 公开/授权日：2015-12-10
信息查询
IPC分类:
