Invention Grant
US09553209B2 Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device manufactured thereby
有权
一种制造半导体器件的方法，该半导体器件包括由此制造的空沟槽结构和半导体器件
- Patent Title: Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device manufactured thereby
- Patent Title (中): 一种制造半导体器件的方法，该半导体器件包括由此制造的空沟槽结构和半导体器件
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Application No.: US14856148Application Date: 2015-09-16
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Publication No.: US09553209B2Publication Date: 2017-01-24
- Inventor: Antonino Fiumara
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed Intellectual Property Law Group LLP
- Priority: ITTO2014A0955 20141118
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/06 ; H01L29/861 ; H01J9/02 ; H01J21/10 ; H01J19/24 ; H01J21/04 ; H01L21/3065 ; H01L21/308 ; H01L29/66
Abstract:
The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.
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