Invention Grant
- Patent Title: Phonon-recyling light-emitting diodes
- Patent Title (中): 声子再生发光二极管
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Application No.: US13969225Application Date: 2013-08-16
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Publication No.: US09557215B2Publication Date: 2017-01-31
- Inventor: Parthiban Santhanam , Dodd Joseph Gray , Rajeev Jagga Ram
- Applicant: Parthiban Santhanam , Dodd Joseph Gray , Rajeev Jagga Ram
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Cooley LLP
- Main IPC: G01J3/02
- IPC: G01J3/02 ; H01L33/00 ; F21V3/02 ; G01J3/10 ; G01J3/42 ; F21Y101/00

Abstract:
Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.
Public/Granted literature
- US20140159582A1 THERMO-ELECTRICALLY PUMPED LIGHT-EMITTING DIODES Public/Granted day:2014-06-12
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