Invention Grant
- Patent Title: Defect logging in nonvolatile memory
- Patent Title (中): 在非易失性存储器中缺陷记录
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Application No.: US14550290Application Date: 2014-11-21
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Publication No.: US09558847B2Publication Date: 2017-01-31
- Inventor: Daniel Tuers , Abhijeet Manohar
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Stoel Rives LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/38 ; G11C29/42 ; G11C29/44 ; G11C16/00
Abstract:
A method of operating a nonvolatile memory block includes reading data from physical units in the block and determining individual error rates for data from the physical units. The error rate data is stored. This is repeated over multiple iterations and aggregated stored error rates are used to identify bad physical units in the block.
Public/Granted literature
- US20160148708A1 Defect Logging in Nonvolatile Memory Public/Granted day:2016-05-26
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