发明授权
- 专利标题： Method for forming a semiconductor device
- 专利标题（中）： 半导体器件形成方法
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申请号： US14920379申请日： 2015-10-22
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公开(公告)号： US09558933B2公开(公告)日： 2017-01-31
- 发明人: Hans-Joachim Schulze , Markus Zundel , Anton Mauder , Andreas Meiser , Franz Hirler , Hans Weber
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Eschweiler & Associates, LLC
- 主分类号： H01L21/425
- IPC分类号： H01L21/425 ; H01L21/02 ; H01L21/265 ; H01L21/321 ; H01L29/66
摘要：
A method for forming a semiconductor device includes carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at a surface of the semiconductor substrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte, causing an oxidation of the surface region of the semiconductor substrate. Further, the method includes reducing the number of remaining oxidizing ions within the oxide layer, while the semiconductor substrate is within an electrolyte.
公开/授权文献
- US20160049296A1 METHOD FOR FORMING A SEMICONDUCTOR DEVICE 公开/授权日：2016-02-18
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