Invention Grant
US09558941B2 Method of forming oxide thin film and method of fabricating oxide thin film transistor using hydrogen peroxide
有权
形成氧化物薄膜的方法和使用过氧化氢制造氧化物薄膜晶体管的方法
- Patent Title: Method of forming oxide thin film and method of fabricating oxide thin film transistor using hydrogen peroxide
- Patent Title (中): 形成氧化物薄膜的方法和使用过氧化氢制造氧化物薄膜晶体管的方法
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Application No.: US14244230Application Date: 2014-04-03
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Publication No.: US09558941B2Publication Date: 2017-01-31
- Inventor: Hyun Jae Kim , Jeong Moo Kwon
- Applicant: Industry-Academic Corporation Foundation, Yonsei University
- Applicant Address: KR Seoul
- Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Carter, DeLuca, Farrell & Schmidt, LLP
- Priority: KR10-2013-0079125 20130705
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/12 ; H01L29/04 ; H01L21/336 ; H01L21/441 ; H01L21/02 ; H01L29/66
Abstract:
Provided are a method of forming an oxide thin film using hydrogen peroxide, and a method of fabricating an oxide thin film transistor using hydrogen peroxide. Embodiments of the present disclosure provide methods of forming an oxide film, including: mixing hydrogen peroxide with a precursor solution in which a precursor material is dissolved in a solvent; applying the precursor solution mixed with the hydrogen peroxide to a substrate; heat treating the substrate.
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