Invention Grant
US09558996B2 Method for filling trench with metal layer and semiconductor structure formed by using the same
有权
用金属层填充沟槽的方法和使用其形成的半导体结构
- Patent Title: Method for filling trench with metal layer and semiconductor structure formed by using the same
- Patent Title (中): 用金属层填充沟槽的方法和使用其形成的半导体结构
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Application No.: US14480648Application Date: 2014-09-09
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Publication No.: US09558996B2Publication Date: 2017-01-31
- Inventor: Chi-Mao Hsu , Hsin-Fu Huang , Min-Chuan Tsai , Chien-Hao Chen , Wei-Yu Chen , Chin-Fu Lin , Jing-Gang Li , Min-Hsien Chen , Jian-Hong Su
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L21/28 ; H01L29/66 ; H01L23/522 ; H01L23/532 ; H01L29/51
Abstract:
A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method.
Public/Granted literature
- US20140374909A1 METHOD FOR FILLING TRENCH WITH METAL LAYER AND SEMICONDUCTOR STRUCTURE FORMED BY USING THE SAME Public/Granted day:2014-12-25
Information query
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