Invention Grant
- Patent Title: Rectifier circuit with reduced reverse recovery time
- Patent Title (中): 整流电路具有降低的反向恢复时间
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Application No.: US14658308Application Date: 2015-03-16
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Publication No.: US09559608B2Publication Date: 2017-01-31
- Inventor: Jack L. Glenn
- Applicant: DELPHI TECHNOLOGIES, INC.
- Applicant Address: US MI Troy
- Assignee: Delphi Technologies, Inc.
- Current Assignee: Delphi Technologies, Inc.
- Current Assignee Address: US MI Troy
- Agent Lawrence D. Hazelton
- Main IPC: H02M7/217
- IPC: H02M7/217 ; H02M7/06 ; H02M1/00

Abstract:
A rectifier circuit includes a MOSFET (M1), and a first Zener diode (D1) or a first Zener-emulator (E1) that emulates the D1. The circuit conducts current in a forward direction from an input to an output, and substantially blocks current in a reverse direction. The M1 is characterized by an on-resistance. A cathode of the D1 or a cathode-contact of the E1 is connected to the input, and the anode of the D1 or an anode-contact of the E1 are connected to the source. The E1 includes a first small-Zener-diode (D11), a first resistor (R11) and a first transistor (M11) interconnected such that the E1 emulates the D1, and is characterized by a Zener-voltage. The Zener-voltage and the on-resistance are selected such that a stored-charge in the body-diode is less than a forward-charge-threshold when current flows in the forward direction, whereby the reverse recover time of the body-diode is reduced.
Public/Granted literature
- US20160276953A1 RECTIFIER CIRCUIT WITH REDUCED REVERSE RECOVERY TIME Public/Granted day:2016-09-22
Information query
IPC分类: