Invention Grant
- Patent Title: Gate driver and related circuit buffer
- Patent Title (中): 门驱动器和相关电路缓冲器
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Application No.: US15183776Application Date: 2016-06-15
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Publication No.: US09559696B2Publication Date: 2017-01-31
- Inventor: Min-Nan Liao
- Applicant: Sitronix Technology Corp.
- Applicant Address: TW Hsinchu County
- Assignee: Sitronix Technology Corp.
- Current Assignee: Sitronix Technology Corp.
- Current Assignee Address: TW Hsinchu County
- Agent Winston Hsu; Scott Margo
- Priority: TW103118172A 20140523
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K19/003 ; H03K19/0185 ; H03K17/687 ; G09G3/36

Abstract:
A circuit buffer for outputting a voltage signal having a magnitude greater than a withstand voltage of any circuit element in the circuit buffer includes a first transistor and a second transistor. The first transistor includes a first terminal and a second terminal electrically connected to an input terminal and an output terminal of the circuit buffer respectively, a third terminal electrically connected to a first power supply terminal, and a fourth terminal electrically connected to the third terminal of the first transistor. The second transistor includes a first terminal and a second terminal electrically connected to the input terminal and the output terminal of the circuit buffer respectively, a third terminal electrically connected to a second power supply terminal, and a fourth terminal electrically connected to the third terminal of the second transistor. Voltages of the first and second power supply terminal are switched between two different levels, respectively.
Public/Granted literature
- US20160294390A1 GATE DRIVER AND RELATED CIRCUIT BUFFER Public/Granted day:2016-10-06
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