Invention Grant
- Patent Title: Overlay metrology method and overlay control method and system
- Patent Title (中): 覆盖测量方法和覆盖控制方法及系统
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Application No.: US14338041Application Date: 2014-07-22
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Publication No.: US09563946B2Publication Date: 2017-02-07
- Inventor: Yung-Yao Lee , Ying-Ying Wang , Shang-Wern Chang , Heng-Hsin Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G01B11/00
- IPC: G01B11/00 ; G06T7/00 ; G01N21/956 ; G01N21/88

Abstract:
The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.
Public/Granted literature
- US20160025650A1 OVERLAY METROLOGY METHOD AND OVERLAY CONTROL METHOD AND SYSTEM Public/Granted day:2016-01-28
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