Invention Grant
- Patent Title: Photonic device structure and method of manufacture
- Patent Title (中): 光子器件结构及制造方法
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Application No.: US14662524Application Date: 2015-03-19
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Publication No.: US09568674B2Publication Date: 2017-02-14
- Inventor: Gurtej Sandhu , Roy Meade
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; G02B6/122 ; G02B6/136 ; G02B6/12
Abstract:
Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.
Public/Granted literature
- US20150192737A1 PHOTONIC DEVICE STRUCTURE AND METHOD OF MANUFACTURE Public/Granted day:2015-07-09
Information query
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