Invention Grant
- Patent Title: Magnetoresistive devices and methods for manufacturing magnetoresistive devices
- Patent Title (中): 磁阻器件及制造磁阻器件的方法
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Application No.: US14717213Application Date: 2015-05-20
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Publication No.: US09570099B2Publication Date: 2017-02-14
- Inventor: Wolfgang Raberg , Andreas Strasser , Hermann Wendt , Klemens Pruegl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schiff Hardin LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; G11B5/39

Abstract:
A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL and a portion of the magnetoresistive stack. The method can further include depositing a photoresist layer on the hard mask before the first etching process and removing the photoresist layer from the hard mask following the first etching process. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.
Public/Granted literature
- US20160343392A1 MAGNETORESISTIVE DEVICES AND METHODS FOR MANUFACTURING MAGNETORESISTIVE DEVICES Public/Granted day:2016-11-24
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