Invention Grant
US09570132B2 Address-remapped memory chip, memory module and memory system including the same
有权
地址重映射存储芯片,内存模块和内存系统包括相同
- Patent Title: Address-remapped memory chip, memory module and memory system including the same
- Patent Title (中): 地址重映射存储芯片,内存模块和内存系统包括相同
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Application No.: US14803119Application Date: 2015-07-20
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Publication No.: US09570132B2Publication Date: 2017-02-14
- Inventor: Cheol Kim , Young-soo Sohn , Sang-Ho Shin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0163217 20141121
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C8/06 ; H01L25/065 ; G11C29/00

Abstract:
A memory chip includes a chip input-output pad unit, a plurality of semiconductor dies. The chip input-output pad unit includes a plurality of input-output pins connected to an external device and the plurality of semiconductor dies are connected commonly to the chip input-output pad unit and having a full memory capacity respectively. Each semiconductor die includes a die input-output pad unit, a memory region and a conversion block. The die input-output pad unit includes a plurality of input-output terminals respectively connected to the input-output pins of the chip input-output pad unit. The memory region includes an activated region corresponding to a portion of the full memory capacity and a deactivated region corresponding to a remainder portion of the full memory capacity. The conversion block connects the activated region except the deactivated region to the die input-output pad unit.
Public/Granted literature
- US20160148656A1 ADDRESS-REMAPPED MEMORY CHIP, MEMORY MODULE AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2016-05-26
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