Invention Grant
- Patent Title: Semiconductor substrates and methods for processing semiconductor substrates
- Patent Title (中): 半导体衬底和半导体衬底的处理方法
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Application No.: US14798796Application Date: 2015-07-14
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Publication No.: US09570291B2Publication Date: 2017-02-14
- Inventor: Shishir Ray , Sandeep Gaan , Sheldon Meyers , Nisha Pillai , Edmund Kenneth Banghart , Kyle Jung
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Lorenz & Kopf, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26 ; H01L21/02 ; H01L29/16
Abstract:
Semiconductor substrates and methods for processing semiconductor substrates are provided. A method for processing a semiconductor substrate includes providing a semiconductor substrate having an outer edge, a central region, and a peripheral region between the outer edge and the central region. The semiconductor substrate also has an upper surface. The method includes forming an amorphous material over the upper surface of the semiconductor substrate in the peripheral region. Also, the method includes irradiating the upper surface of the semiconductor substrate, wherein the amorphous material inhibits cracking at the outer edge of the semiconductor substrate.
Public/Granted literature
- US20170018426A1 SEMICONDUCTOR SUBSTRATES AND METHODS FOR PROCESSING SEMICONDUCTOR SUBSTRATES Public/Granted day:2017-01-19
Information query
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