发明授权
- 专利标题： Method of forming contact strucutre
- 专利标题（中）： 形成接触结构的方法
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申请号： US14709083申请日： 2015-05-11
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公开(公告)号： US09570348B2公开(公告)日： 2017-02-14
- 发明人: Pin-Hong Chen , Kuo-Chih Lai , Chia-Chang Hsu , Chun-Chieh Chiu , Li-Han Chen , Shu-Min Huang , Min-Chuan Tsai , Hsin-Fu Huang , Chi-Mao Hsu
- 申请人： United Microelectronics Corp.
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of forming a contact structure is provided. A silicon-containing substrate is provided with a composite dielectric layer formed thereon. An opening penetrates through the composite dielectric layer and exposes a portion of the source/drain region. A titanium nitride layer is formed in the opening, and the titanium nitride layer is in contact with the exposed portion of the source/drain region. The titanium nitride layer is annealed, so that the bottom portion of the titanium nitride layer is partially transformed into a titanium silicide layer. A conductive layer is formed to fill up the opening.
公开/授权文献
- US20160336227A1 METHOD OF FORMING CONTACT STRUCUTRE 公开/授权日：2016-11-17
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