Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14818922Application Date: 2015-08-05
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Publication No.: US09570384B2Publication Date: 2017-02-14
- Inventor: Lawrence H. White , Robert Vina , Terry Mcmahon , James R. Przybyla
- Applicant: Hewlett-Packard Development Company, L.P.
- Applicant Address: US TX Houston
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Houston
- Agency: Thorpe, North & Western LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/552 ; H01L23/52 ; H01L29/40 ; H01L23/498 ; H01L21/768 ; H01L23/00
Abstract:
A semiconductor device can include a substrate and a trace layer positioned in proximity to the substrate and including a trace for supplying an electrical connection to the semiconductor device. Conductive layers can be positioned in proximity to the trace layer and form a bond pad. A non-conductive thin film layer can be positioned between the trace layer and the conductive layers. The thin film layer can include a via to enable the electrical connection from the trace to the bond pad. A portion of the trace between the substrate and the plurality of conductive layers can have a beveled edge.
Public/Granted literature
- US20150340331A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-11-26
Information query
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