Invention Grant
- Patent Title: High density resistive random access memory (RRAM)
- Patent Title (中): 高密度电阻随机存取存储器（RRAM）
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Application No.: US14960595Application Date: 2015-12-07
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Publication No.: US09570512B2Publication Date: 2017-02-14
- Inventor: Qing Liu , John Hongguang Zhang
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Gardere Wynne Sewell, LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L27/24 ; H01L45/00
Abstract:
A resistive random access memory (RRAM) structure is formed on a supporting substrate and includes a first electrode and a second electrode. The first electrode is made of a silicided fin on the supporting substrate and a first metal liner layer covering the silicided fin. A layer of dielectric material having a configurable resistive property covers at least a portion of the first metal liner. The second electrode is made of a second metal liner layer covering the layer of dielectric material and a metal fill in contact with the second metal liner layer. A non-volatile memory cell includes the RRAM structure electrically connected between an access transistor and a bit line.
Public/Granted literature
- US20160307964A1 HIGH DENSITY RESISTIVE RANDOM ACCESS MEMORY (RRAM) Public/Granted day:2016-10-20
Information query
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