发明授权
- 专利标题： Thin film transistor, array substrate and method of fabricating the same, and display device
- 专利标题（中）： 薄膜晶体管，阵列基板及其制造方法以及显示装置
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申请号： US14400128申请日： 2013-12-04
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公开(公告)号： US09570629B2公开(公告)日： 2017-02-14
- 发明人: Jiaxiang Zhang , Jian Guo , Xiaohui Jiang
- 申请人： BOE Technology Group Co., Ltd. , Beijing BOE Optoelectronics Technology Co., Ltd.
- 申请人地址： CN Beijing CN Beijing
- 专利权人： BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS
- 当前专利权人： BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS
- 当前专利权人地址： CN Beijing CN Beijing
- 代理机构： Frommer Lawrence & Haug LLP
- 优先权： CN201310364369 20130820
- 国际申请： PCT/CN2013/088516 WO 20131204
- 国际公布： WO2015/024325 WO 20150226
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/786 ; H01L29/417 ; H01L29/423 ; H01L27/12 ; H01L29/24
摘要：
The embodiments of the present invention provide a thin film transistor including a gate, an upper active layer, a lower active layer, an upper source, a lower source, an upper drain and a lower drain. The upper active layer and the lower active layer are disposed at an upper side and a lower side of the gate, respectively, the lower source and the lower drain are connected to the lower active layer, respectively, and the upper source and the upper drain are connected to the upper active layer, respectively. The embodiments of the present invention also provide an array substrate including the thin film transistor, a method of fabricating the array substrate, and a display device including the array substrate.
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