Invention Grant
- Patent Title: Resistive random access memory
- Patent Title (中): 电阻随机存取存储器
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Application No.: US14491713Application Date: 2014-09-19
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Publication No.: US09570681B2Publication Date: 2017-02-14
- Inventor: Cristina Casellato , Carmela Cupeta , Michele Magistretti , Fabio Pellizzer , Roberto Somaschini
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L23/528 ; H01L27/24 ; H01L23/532 ; H01L27/10
Abstract:
A resistive random access memory may include a memory array and a periphery around the memory array. Decoders in the periphery may be coupled to address lines in the array by forming a metallization in the periphery and the array at the same time using the same metal deposition. The metallization may form row lines in the array.
Public/Granted literature
- US20150044832A1 RESISTIVE RANDOM ACCESS MEMORY Public/Granted day:2015-02-12
Information query
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