Invention Grant
- Patent Title: Method for compensating thin film transistor threshold voltage drift
- Patent Title (中): 补偿薄膜晶体管阈值电压漂移的方法
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Application No.: US14671507Application Date: 2015-03-27
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Publication No.: US09571090B2Publication Date: 2017-02-14
- Inventor: Chao Xu , Chunfang Zhang , Yan Wei
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201210176588 20120531
- Main IPC: G11C19/00
- IPC: G11C19/00 ; H03K17/30 ; G09G3/36 ; G11C19/28
Abstract:
A method for compensating a threshold voltage drift of a thin film transistor comprises: controlling a drain and a gate of the thin film transistor to have a same voltage; and keeping the voltage at the gate of the thin film transistor unchanged and controlling the voltage at the drain of the thin film transistor to be equal to a voltage at a source of the thin film transistor.
Public/Granted literature
- US20150207503A1 METHOD FOR COMPENSATING THIN FILM TRANSISTOR THRESHOLD VOLTAGE DRIFT Public/Granted day:2015-07-23
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