发明授权
- 专利标题: Semiconductor device having high-voltage transistor
- 专利标题(中): 具有高压晶体管的半导体器件
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申请号: US15138998申请日: 2016-04-26
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公开(公告)号: US09576681B2公开(公告)日: 2017-02-21
- 发明人: Dong Hwan Lee
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Group LLP
- 优先权: KR10-2011-0139986 20111222
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C11/00 ; G11C7/00 ; G11C29/44 ; G11C7/18 ; H01L27/02 ; H01L27/105 ; G11C16/34 ; G11C29/42 ; G11C29/52 ; H01L27/108 ; G11C29/04
摘要:
A semiconductor device includes a semiconductor device, comprising a memory cell array including a plurality of memory cells connected to a first bit line and a second bit line, respectively, a page buffer group, and bit line selection circuits including a plurality of selection circuit blocks to connect the first bit lines or the second bit lines to the page buffer group, wherein each of the selection circuit blocks includes a first contact region and a second contact region to which the first and second bit lines coupled, and same bit lines of the first and second bit lines are coupled to contact regions adjacent to one another of the first and second contact regions included in bit line selection circuits adjacent to one another of the bit line selection circuits.
公开/授权文献
- US20160240232A1 SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE TRANSISTOR 公开/授权日:2016-08-18
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