发明授权
US09576681B2 Semiconductor device having high-voltage transistor 有权
具有高压晶体管的半导体器件

Semiconductor device having high-voltage transistor
摘要:
A semiconductor device includes a semiconductor device, comprising a memory cell array including a plurality of memory cells connected to a first bit line and a second bit line, respectively, a page buffer group, and bit line selection circuits including a plurality of selection circuit blocks to connect the first bit lines or the second bit lines to the page buffer group, wherein each of the selection circuit blocks includes a first contact region and a second contact region to which the first and second bit lines coupled, and same bit lines of the first and second bit lines are coupled to contact regions adjacent to one another of the first and second contact regions included in bit line selection circuits adjacent to one another of the bit line selection circuits.
公开/授权文献
信息查询
0/0