Invention Grant
- Patent Title: Vertical stack approach in low profile aluminum solid electrolytic capacitors
- Patent Title (中): 薄型铝固体电解电容器的垂直堆叠方式
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Application No.: US14070941Application Date: 2013-11-04
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Publication No.: US09576734B2Publication Date: 2017-02-21
- Inventor: Liancai Ning , Qun Ya , Xincheng Jin , Erik Karlsen Reed , Chris Stolarski
- Applicant: Kemet Electronics Corporation
- Applicant Address: US SC Simpsonville
- Assignee: Kemet Electronics Corporation
- Current Assignee: Kemet Electronics Corporation
- Current Assignee Address: US SC Simpsonville
- Agency: Perkins Law Firm, LLC
- Agent Joseph T. Guy
- Main IPC: H01G9/042
- IPC: H01G9/042 ; H01G4/30 ; H01G9/02 ; H01G9/04 ; H01G9/15

Abstract:
An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least an active area of the capacitor. Spacers separate adjacent dielectrics and the interstitial space between the adjacent dielectrics and spacers has a conductive material in therein.
Public/Granted literature
- US20140055909A1 Vertical Stack Approach in Low Profile Aluminum Solid Electrolytic Capacitors Public/Granted day:2014-02-27
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