Invention Grant
- Patent Title: Semiconductor wafer and method for manufacturing the same
- Patent Title (中): 半导体晶片及其制造方法
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Application No.: US14788699Application Date: 2015-06-30
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Publication No.: US09576793B2Publication Date: 2017-02-21
- Inventor: Giuseppe Abbondanza
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: ITCT2010A0006 20100429
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/02 ; H01L29/20 ; H01L29/267
Abstract:
An embodiment of a method for manufacturing a semiconductor wafer includes providing a monocrystalline silicon wafer, epitaxially growing a first layer of a first material on the silicon wafer, and epitaxially growing a second layer of a second material on the first layer. For example, said first material may be monocrystalline silicon carbide, and said second material may be monocrystalline silicon.
Public/Granted literature
- US20150325656A1 SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-11-12
Information query
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