发明授权
US09576798B2 Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
有权
制造包括具有不同应变状态的晶体管沟道的半导体层的方法以及相关的半导体层
- 专利标题： Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
- 专利标题（中）： 制造包括具有不同应变状态的晶体管沟道的半导体层的方法以及相关的半导体层
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申请号： US14934567申请日： 2015-11-06
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公开(公告)号： US09576798B2公开(公告)日： 2017-02-21
- 发明人: Bich-Yen Nguyen , Walter Schwarzenbach , Christophe Maleville
- 申请人： Soitec
- 申请人地址： FR Bernin
- 专利权人： SOITEC
- 当前专利权人： SOITEC
- 当前专利权人地址： FR Bernin
- 代理机构： TraskBritt
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/12 ; H01L21/266 ; H01L21/336 ; H01L21/225 ; H01L29/78 ; H01L21/265 ; H01L21/02 ; H01L29/16 ; H01L29/32 ; H01L21/84 ; H01L21/762 ; H01L29/10
摘要：
Methods of fabricating a semiconductor structure include providing a semiconductor-on-insulator (SOI) substrate including a base substrate, a strained stressor layer above the base substrate, a surface semiconductor layer, and a dielectric layer between the stressor layer and the surface semiconductor layer. Ions are implanted into or through a first region of the stressor layer, and additional semiconductor material is formed on the surface semiconductor layer above the first region of the stressor layer. The strain state in the first region of the surface semiconductor layer above the first region of the stressor layer is altered, and a trench structure is formed at least partially into the base substrate. The strain state is altered in a second region of the surface semiconductor layer above the second region of the stressor layer. Semiconductor structures are fabricated using such methods.
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