Invention Grant
US09576810B2 Process for etching metal using a combination of plasma and solid state sources
有权
使用等离子体和固态源的组合蚀刻金属的方法
- Patent Title: Process for etching metal using a combination of plasma and solid state sources
- Patent Title (中): 使用等离子体和固态源的组合蚀刻金属的方法
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Application No.: US14290861Application Date: 2014-05-29
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Publication No.: US09576810B2Publication Date: 2017-02-21
- Inventor: Subhash Deshmukh , Joseph Johnson , Jingjing Liu , He Ren
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/32 ; C23F4/00 ; H01L21/311 ; H01L21/3213 ; H05K3/02 ; H01L21/268 ; H01L21/02
Abstract:
An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.
Public/Granted literature
- US20150099369A1 PROCESS FOR ETCHING METAL USING A COMBINATION OF PLASMA AND SOLID STATE SOURCES Public/Granted day:2015-04-09
Information query
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