Invention Grant
- Patent Title: Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same
- Patent Title (中): 处理多孔电介质层的方法和使用其制造半导体器件的方法
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Application No.: US14847130Application Date: 2015-09-08
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Publication No.: US09576848B2Publication Date: 2017-02-21
- Inventor: Taejin Yim , Thomas Oszinda , Byunghee Kim , Sanghoon Ahn , Naein Lee , Keeyoung Jun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0165321 20141125
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/768 ; H01L21/02
Abstract:
A method of treating a porous dielectric layer includes preparing a substrate on which the porous dielectric layer including an opening and pores exposed by the opening is formed, supplying a first precursor onto the substrate to form a first sub-sealing layer sealing the exposed pores, and supplying a second precursor onto the first sub-sealing layer to form a second sub-sealing layer covering the first sub-sealing layer. Each of the first and second precursors includes silicon, and a molecular weight of the second precursor is smaller than that of the first precursor.
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