发明授权
US09576875B2 Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip arrangements
有权
用于制造芯片布置的方法,用于制造芯片封装的方法,芯片封装和芯片布置
- 专利标题: Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip arrangements
- 专利标题(中): 用于制造芯片布置的方法,用于制造芯片封装的方法,芯片封装和芯片布置
-
申请号: US14591014申请日: 2015-01-07
-
公开(公告)号: US09576875B2公开(公告)日: 2017-02-21
- 发明人: Reinhard Hess , Katharina Umminger , Gabriel Maier , Markus Menath , Gunther Mackh , Hannes Eder , Alexander Heinrich
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Viering, Jentschura & Partner mbB
- 主分类号: H01L23/31
- IPC分类号: H01L23/31 ; H01L23/485 ; H01L21/78 ; H01L21/3065 ; H01L21/56 ; H01L23/00 ; H01L21/683 ; H01L21/02 ; H01L21/768
摘要:
A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole in the carrier includes: selectively removing carrier material, thereby forming a cavity in the carrier, forming passivation material over one or more cavity walls exposed by the selective removal of the carrier material; selectively removing a portion of the passivation material and further carrier material exposed by the selective removal of the passivation material, wherein a further portion of the passivation material remains over at least one cavity side wall; the method further including subsequently forming a layer over the further portion of passivation material remaining over the at least one cavity side wall.
公开/授权文献
信息查询
IPC分类: