Invention Grant
- Patent Title: Semiconductor devices comprising interconnect structures and methods of fabrication
- Patent Title (中): 包括互连结构和制造方法的半导体器件
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Application No.: US14827763Application Date: 2015-08-17
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Publication No.: US09576904B2Publication Date: 2017-02-21
- Inventor: Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/532 ; H01L23/522 ; H01L25/065 ; H01L25/00 ; H01L27/105
Abstract:
Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material.
Public/Granted literature
- US20150357284A1 SEMICONDUCTOR DEVICES COMPRISING INTERCONNECT STRUCTURES AND METHODS OF FABRICATION Public/Granted day:2015-12-10
Information query
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