Invention Grant
- Patent Title: Methods related to a sputtered titanium tungsten layer formed over a copper interconnect stack structure
- Patent Title (中): 涉及在铜互连堆叠结构上形成的溅射钛钨层的方法
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Application No.: US15224993Application Date: 2016-08-01
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Publication No.: US09576906B2Publication Date: 2017-02-21
- Inventor: Kezia Cheng
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe Martens Olson and Bear LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L23/532 ; H01L21/8252 ; H01L21/768 ; H01L23/535 ; H01L23/528 ; H01L23/66 ; H01L27/06
Abstract:
Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including a barrier, a copper (Cu) layer disposed over the barrier, and a first titanium (Ti) layer disposed over the Cu layer. The metalized structure can further include a sputtered titanium tungsten (TiW) layer disposed over the first Ti layer. The barrier can include an assembly of titanium nitride (TiN) and Ti layers. The metalized structure can further include a second Ti layer disposed over the sputtered TiW layer.
Public/Granted literature
- US20160343667A1 METHODS RELATED TO A SPUTTERED TITANIUM TUNGSTEN LAYER FORMED OVER A COPPER INTERCONNECT STACK STRUCTURE Public/Granted day:2016-11-24
Information query
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